Semiconductor device and method of manufacturing same

ABSTRACT

A semiconductor device (semiconductor module) includes a circuit board (module board) and a semiconductor element mounted on the circuit board. A shielding layer that blocks electromagnetic waves is disposed on the upper surface of the semiconductor element, and an antenna element is disposed over the shielding layer. The semiconductor element and the antenna element are electrically connected to each other by a connecting portion. This structure enables the semiconductor device to be reduced in size and to have both an electromagnetic-wave blocking function and an antenna function.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2011-155409, filed on Jul. 14,2011, the entire contents of which are incorporated herein by reference.

FIELD

The embodiments discussed herein are related to semiconductor devicesand methods of manufacturing the same.

BACKGROUND

Some technologies are known to provide semiconductor devices with ashielding function or an antenna function. Examples of such technologiesinclude shielding semiconductor elements and other components mounted oncircuit boards from electromagnetic waves, providing antennas forcircuit boards on which semiconductor elements and other components aremounted, covering semiconductor elements and other components mounted oncircuit boards with shields and then covering the structures withantennas, providing antennas for first surfaces of circuit boards, thefirst surfaces being on the reverse sides of second surfaces on whichsemiconductor elements and other components are mounted, and providingantennas for rear surfaces of packages including semiconductor elementsand other components. In addition, forming conductive layers to surroundsignal wiring layers in view of propagation characteristics of signalstransmitted from and received by antennas is also a known technology(see, for example, Japanese Patent No. 4,379,004, Japanese NationalPublication of International Patent Application No. 2004-519916, andJapanese Laid-open Patent Publication Nos. 2009-158742, 2001-292026, and2007-005782)

For example, a module (a semiconductor device including semiconductorelements) provided with a shielding part functioning as a shield and anantenna part functioning as an antenna may be mounted on a circuit boardsuch as a motherboard to constitute a device. In this case, however, thesize of the device may be increased. The shielding part and the antennapart may be integrated together to constitute the module. In this case,however, processing of components or electrical connection duringassembling of the module may become complicated, and the module may failto achieve desired properties and reliability.

SUMMARY

According to one aspect of the invention, a semiconductor deviceincludes a circuit board, a semiconductor element mounted on the circuitboard, a shielding layer disposed on the upper surface of thesemiconductor element, an antenna element disposed over the shieldinglayer, and a connecting portion passing through the shielding layer andelectrically connecting the semiconductor element and the antennaelement.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 illustrates a first example structure of a semiconductor device;

FIG. 2 illustrates a second example structure of the semiconductordevice;

FIG. 3 illustrates an example semiconductor module according to a firstembodiment;

FIGS. 4A and 4B illustrate example waveguide patterns formed in anantenna layer;

FIGS. 5A to 5C illustrate an antenna element and a connecting portion;

FIGS. 6A to 6D illustrate an example method of forming the semiconductormodule according to the first embodiment;

FIGS. 7A to 7C illustrate the example method of forming thesemiconductor module according to the first embodiment;

FIGS. 8A to 8C illustrate the example method of forming thesemiconductor module according to the first embodiment;

FIG. 9 illustrates the example method of forming the semiconductormodule according to the first embodiment;

FIG. 10 illustrates an example semiconductor module according to asecond embodiment;

FIG. 11 illustrates the example semiconductor module according to thesecond embodiment;

FIGS. 12A to 12C illustrate an example method of forming thesemiconductor module according to the second embodiment;

FIGS. 13A and 13B illustrate the example method of forming thesemiconductor module according to the second embodiment;

FIGS. 14A and 14B illustrate the example method of forming thesemiconductor module according to the second embodiment;

FIGS. 15A and 15B illustrate the example method of forming thesemiconductor module according to the second embodiment;

FIGS. 16A and 16B illustrate the example method of forming thesemiconductor module according to the second embodiment;

FIG. 17 illustrates a semiconductor module of another form;

FIG. 18 illustrates an example semiconductor module according to a thirdembodiment;

FIG. 19 illustrates the example semiconductor module according to thethird embodiment;

FIG. 20 illustrates an example semiconductor module according to afourth embodiment; and

FIGS. 21A and 21B illustrate the semiconductor module according to thefourth embodiment.

DESCRIPTION OF EMBODIMENTS

FIG. 1 illustrates a first example structure of a semiconductor device.FIG. 1 is a schematic cross-section of the semiconductor device havingthe first example structure.

A semiconductor device (semiconductor module) 10 a illustrated in FIG. 1includes a circuit board (module board) 11, a semiconductor element 12,a shielding layer 13, an antenna element 14, and a connecting portion15.

Although not illustrated, the module board 11 has predetermined circuitsinside thereof. The circuits are formed of conductive portions such aswiring lines and vias. The module board 11 also has electrode pads 11 adisposed on the top and bottom surfaces thereof. The semiconductorelement 12 is mounted on this module board 11. In this example, bumps 12a and electrode pads 12 b are disposed on the lower surface of thesemiconductor element (circuit surface having wiring layers and the likeformed thereon) so as to correspond to the electrode pads 11 a of themodule board 11, and the semiconductor element is flip-chip mounted onthe module board 11 with the bumps 12 a, the electrode pads 12 b, andjoining portions 11 b interposed therebetween.

The shielding layer 13 is formed on at least the upper surface (surfaceof a semiconductor substrate) of the semiconductor element 12 mounted onthe module board 11 as described above. The shielding layer 13 blockselectromagnetic waves propagating toward the semiconductor element 12,or blocks electromagnetic waves generated at the semiconductor element12 from being emitted to the outside. The shielding layer 13 is composedof a material capable of blocking electromagnetic waves, for example, amagnetic material or a metal material. The shielding layer 13 may be,for example, a layer (sheet) composed of resin in which magneticparticles are dispersed, a magnetic layer composed of a magneticmaterial, or a metal layer composed of a metal material such as copper(Cu). In addition, the shielding layer 13 may partially include a sheetcomposed of resin in which magnetic particles are dispersed, a magneticlayer, or a metal layer. In cases where a metal layer is used as a partof the shielding layer 13, it is desirable that the metal layer bedisposed on, for example, the outermost surface of the shielding layer13.

The antenna element 14 is disposed on the shielding layer 13. Theantenna element 14 has a function of an antenna that receiveselectromagnetic waves from the outside. The antenna element 14 includesat least one antenna layer having, for example, a predeterminedwaveguide pattern (waveguide) formed therein to receive electromagneticwaves. The antenna layer may be composed of Cu or a metal materialmainly composed of Cu. The antenna layer may be formed on, for example,the top surface or the top and bottom surfaces of a dielectric layercomposed of resin or the like. The antenna layers formed on the top andbottom surfaces may be electrically connected by conductive portionsthat pass through the dielectric layer interposed between the antennalayers.

The antenna element 14 is electrically connected to the semiconductorelement 12 by the connecting portion 15. In this example, the connectingportion 15 passes through the shielding layer 13 so as to reach theinside of the semiconductor element 12, and the antenna element 14 isdisposed on the shielding layer 13 so as to be electrically connected tothe connecting portion 15. This enables the semiconductor element 12 andthe antenna element 14 to be electrically interconnected.

In this case, the connecting portion 15 serves as a through-silicon via(TSV) that passes through, for example, the shielding layer 13 and thesemiconductor substrate of the semiconductor element 12 and that isconnected to conductive portions inside an wiring layer formed on thesemiconductor substrate (herein adjacent to the module board 11).

In this manner, the semiconductor element 12 mounted on the module board11 and the antenna element 14 are electrically interconnected by theconnecting portion 15 that passes through the shielding layer 13 formedon the upper surface of the semiconductor element 12 in thesemiconductor module 10 a illustrated in FIG. 1. Electrical signals, forexample, currents, derived from predetermined electromagnetic wavesreceived by the antenna element 14 are supplied to the semiconductorelement 12 through the connecting portion 15. The shielding layer 13blocks electromagnetic waves received by the antenna element 14 frombeing incident on the semiconductor element 12, or electromagnetic wavesgenerated at the semiconductor element 12 from being emitted. Theantenna element 14 receives power from the module board 11 through thesemiconductor element 12 and the connecting portion 15 during signaltransmission.

In this manner, the shielding layer 13 formed on the semiconductorelement 12 and the antenna element 14 disposed on the shielding layer 13enable the semiconductor module 10 a to have a module structure withboth a shielding function and an antenna function. This leads to areduction in the size of the module compared with the case where, forexample, a module having a shielding function is provided with anadditional antenna part outside thereof.

Although the shielding layer 13 is formed on only the upper surface ofthe semiconductor element 12 in this case, the shielding layer 13 mayalso be formed on side surfaces of the semiconductor element 12. Forexample, the shielding layer 13 may be formed on the upper surface andthe side surfaces of the semiconductor element when the semiconductorelement 12 has a relatively large thickness or when incidence ofelectromagnetic waves from the outside on the side surfaces of thesemiconductor element 12 or emission of electromagnetic waves from theside surfaces of the semiconductor element 12 is not to be overlooked.

The position of the connecting portion 15 illustrated in FIG. 1 is anexample, and may be set in accordance with the structure of thesemiconductor element 12 and that of the antenna element 14 asappropriate. For example, the connecting portion 15 may be formed at anouter end portion of the semiconductor element 12. In addition, theconnecting portion 15 may be formed outside the semiconductor element 12as illustrated in FIG. 2.

FIG. 2 illustrates a second example structure of a semiconductor device.FIG. 2 is a schematic cross-section of the semiconductor device havingthe second example structure.

A semiconductor device (semiconductor module) 10 b illustrated in FIG. 2includes a module board 11, a semiconductor element 12 mounted thereon,a shielding layer 13 formed on the upper surface of the semiconductorelement 12, an antenna element 14 disposed on the shielding layer 13,and a connecting portion 15. The module board 11 and the antenna element14 are electrically interconnected by the connecting portion 15. Thesemiconductor element 12 and the connecting portion 15 disposed betweenthe module board 11 and the antenna element 14 are sealed by a sealingresin 16.

Electrical signals derived from electromagnetic waves received by theantenna element 14 are supplied from the connecting portion 15 to thesemiconductor element 12 through the module board 11. The antennaelement 14 receives power from the module board 11 through theconnecting portion 15 during signal transmission.

As in the case of the semiconductor module 10 a, the size of thesemiconductor module 10 b having the above-described structure may alsobe reduced compared with the case where, for example, an antenna part isadded outside the module.

Semiconductor modules will now be described in more detail.

First, a first embodiment will be described.

FIG. 3 illustrates an example semiconductor module according to thefirst embodiment. FIG. 3 is a schematic cross-section of thesemiconductor module according to the first embodiment.

A semiconductor module (semiconductor device) 100 a illustrated in FIG.3 includes a module board (circuit board) 110, a semiconductor element120, a shielding layer 130, an antenna element 140, and a connectingportion 150.

Although not illustrated, the module board 110 in the semiconductormodule 100 a has predetermined circuits inside thereof. The circuits areformed of conductive portions such as wiring lines and vias. The moduleboard 110 also has electrode pads 111 and 112 serving as terminals forexternal connection disposed on the top and bottom surfaces thereof.

The semiconductor element 120 is mounted on one of the surfaces of themodule board 110. Electrode pads 121 and bumps 122 are disposed on thelower surface of the semiconductor element 120 (circuit surface havingwiring layers and the like formed thereon) so as to correspond to theelectrode pads 111 of the module board 110, and the semiconductorelement 120 is flip-chip mounted on the module board 111 with theelectrode pads 121, the bumps 122, and joining portions 113 interposedtherebetween. An underfill resin 170 fills the space between thesemiconductor element 120 and the module board 110.

The shielding layer 130 is composed of, for example, resin containingmagnetic particles, and has a sheet-like shape. The shielding layer 130is formed on the upper surface (surface of a semiconductor substrate) ofthe semiconductor element 120. The shielding layer 130 may also beformed on side surfaces of the semiconductor element 120 in accordancewith the form of the semiconductor element 120.

The antenna element 140 is disposed on the shielding layer 130. Theantenna element 140 includes a first antenna layer 141, a second antennalayer 142, a dielectric layer 143, and conductive portions (vias) 144.

The first antenna layer 141 is formed on the shielding layer 130, andthe second antenna layer 142 is formed over the first antenna layer 141with the dielectric layer 143 interposed therebetween. The first antennalayer 141 and the second antenna layer 142 are composed of Cu or a metalmaterial mainly composed of Cu. The first antenna layer 141 and thesecond antenna layer 142 are electrically interconnected by theconductive portions 144. The conductive portions 144 are composed of Cu,solder, or the like, and pass through the dielectric layer 143.

For example, the first antenna layer 141 is not patterned, and thesecond antenna layer 142 has a predetermined waveguide pattern thatpropagates received electromagnetic waves. The waveguide pattern of thesecond antenna layer 142 will be described below.

The antenna element 140 is electrically connected to the semiconductorelement 120 by the connecting portion 150. The connecting portion 150may be a TSV. This connecting portion 150 passes through the firstantenna layer 141 of the antenna element 140 and the shielding layer 130thereunder so as to reach inside the semiconductor element 120. Theconnecting portion 150 is connected to a predetermined portion of thesemiconductor element 120. In this example, the connecting portion 150is connected to one of the electrode pads 121 linked to wiring lines(not illustrated). The upper end of the connecting portion 150 isconnected to a conductive portion 144 a (144) of the antenna element140.

The semiconductor module 100 a having the above-described structure iselectrically connected to electrode pads 301 of a motherboard 300 bybumps 101 composed of solder or the like, and thereby mounted on themotherboard 300.

As described above, a predetermined waveguide pattern is formed in thesecond antenna layer 142 of the antenna element 140 in the semiconductormodule 100 a.

FIGS. 4A and 4B illustrate example waveguide patterns formed in theantenna layer. FIGS. 4A and 4B are example schematic plan views of theantenna layer.

The waveguide patterns formed in antenna layers 400 illustrated in FIGS.4A and 4B include slot pairs 401 each formed of a pair of rectangularslots (openings; through-holes) 401 a laid out such that thelongitudinal directions thereof intersect with each other. FIG. 4Aillustrates a waveguide pattern of a so-called multiple slot-pairantenna. The waveguide pattern includes a plurality of slot pairs 401arranged in parallel. FIG. 4B illustrates a waveguide pattern of aso-called radial-line slot-pair antenna. The waveguide pattern includesa plurality of slot pairs 401 arranged in a spiral (indicated by adotted line).

The plane size and the layout of each slot 401 a in the slot pairs 401and the layout of the plurality of slot pairs 401 are designed on thebasis of, for example, the frequency (wavelength) of electromagneticwaves to be transmitted and received by the antenna layer 400. Theantenna layer 400 exchanges electrical signals through the conductiveportions 144 disposed adjacent to the slot pairs 401 or through theconductive portion 144 a (144) in a central area during signaltransmission and reception.

The second antenna layer 142 of the antenna element 140 in thesemiconductor module 100 a may have a waveguide pattern similar to thoseformed in the antenna layers 400 illustrated in FIGS. 4A and 4B.

FIGS. 5A to 5C illustrate the antenna element and the connectingportion. FIGS. 5A to 5C are schematic cross-sections of the antennaelement and the connecting portion.

FIG. 5A illustrates the antenna element 140 including the first antennalayer 141 that is not patterned and the second antenna layer 142 thathas a waveguide pattern including slots 401 a (slot pairs 401) formedtherein. The first antenna layer 141 and the second antenna layer 142are electrically interconnected by the conductive portions 144 formed atpositions corresponding to those of the slot pairs 401. The conductiveportion 144 a (144) located at the central portion is electricallyconnected to the connecting portion 150.

As illustrated in FIGS. 5A to 5C, a hollow portion 145 may be leftaround the periphery of the conductive portion 144 a that iselectrically connected to the connecting portion 150 at the centralportion.

A structure such as an insulating film for insulating the connectingportion 150 from the first antenna layer 141 or a structure forseparating the edge of the first antenna layer 141 from the side surfaceof the connecting portion 150 may be provided between the connectingportion 150 and the first antenna layer 141.

As illustrated in FIG. 5B, the antenna element does not need to includethe conductive portions 144 (except for the conductive portion 144 aconnected to the connecting portion 150) between the first antenna layer141 and the second antenna layer 142, and the first antenna layer 141and the second antenna layer 142 may be capacitively coupled to eachother to constitute the antenna element.

As illustrated in FIG. 5C, the antenna element does not need to includethe first antenna layer 141 in cases where the shielding layer 130 is ametal layer partially (outermost surface) or entirely composed of, forexample, Cu. In this case, the shielding layer 130, the dielectric layer143 including the conductive portions 144, and the second antenna layer142 constitute the antenna element. That is, the shielding layer 130functions as a part of the antenna element instead of the first antennalayer 141. The antenna element does not need to include the conductiveportions 144 (except for the conductive portion 144 a) also in thiscase.

In the semiconductor module 100 a, electrical signals derived fromelectromagnetic waves received by the antenna element 140 are suppliedto the semiconductor element 120 through the connecting portion 150. Theantenna element 140 receives power from the module board 110 through thesemiconductor element 120 and the connecting portion 150 during signaltransmission.

The semiconductor module 100 a having the above-described structure ismounted on the motherboard (circuit board) 300.

In the semiconductor module 100 a, the shielding layer 130 and theantenna element 140 are disposed on the semiconductor element 120mounted on the module board 110. This structure leads to a reduction inthe size of the module.

Next, an example method of forming the semiconductor module 100 aaccording to the first embodiment will be described with reference toFIGS. 6A to 9.

First, a semiconductor element 120 as illustrated in FIG. 6A isprepared. FIG. 6A illustrates only one semiconductor element 120.However, in this preliminary stage, the semiconductor element 120 may bea wafer to be diced into a plurality of semiconductor elements 120(hereinafter referred to as a “wafer state”).

Next, as illustrated in FIG. 6B, a shielding layer 130 is formed on theupper surface (a surface of a semiconductor substrate) of thesemiconductor element 120 (wafer state). Subsequently, a first antennalayer 141 is formed on the shielding layer 130. Herein, the shieldinglayer 130 is a sheet composed of resin in which magnetic particles(magnetic metal powder) are dispersed. Such a sheet produced in advanceis bonded to the upper surface of the semiconductor element 120 whilethe resin is semicured. Alternatively, resin composite paste includingresin in which magnetic particles are dispersed is applied to the uppersurface of the semiconductor element 120. The sheet or the paste is thencured to form the shielding layer 130. The first antenna layer 141 isformed on the shielding layer 130 using Cu or the like by electrolessplating or vapor deposition.

Next, as illustrated in FIG. 6C, an opening 151 is formed by laserirradiation at a position where a connecting portion 150 is to beformed. The opening 151 passes through the first antenna layer 141 andthe shielding layer 130, and reaches inside the semiconductor element120. In this example, the opening 151 formed by laser irradiationreaches one of electrode pads 121 exposed through the lower surface(circuit surface having wiring layers and the like formed thereon) ofthe semiconductor element 120.

This laser irradiation causes a sidewall portion of the opening 151 inthe shielding layer 130 to be carbonized, resulting in a carbide layer133 as illustrated in, for example, FIG. 9. Herein, the shielding layer130 is composed of resin 132 in which magnetic particles 131 aredispersed. The shielding layer 130 becomes conductive at the portion ofthis carbide layer 133 whereas the shielding layer 130 is electricallyinsulated or highly resistive at portions other than the carbide layer133. In addition, this laser irradiation causes a sidewall portion ofthe opening 151 in the semiconductor element 120 (semiconductorsubstrate 124) to be oxidized, resulting in an oxide layer (notillustrated). For example, a silicon oxide (SiO) layer is formed incases where the semiconductor substrate 124 is a silicon (Si) board. Inaddition, this laser irradiation may cause an oxide layer (notillustrated) to be formed at a sidewall portion of the opening 151 inthe first antenna layer 141.

After the opening 151 is formed by laser irradiation, an ashing processusing oxygen (O₂) plasma gas may be performed. This ashing processoxidizes the surface of the semiconductor substrate 124 exposed throughthe inner surface of the opening 151 or stabilizes the oxide layerformed during laser irradiation, and increases the insulation propertiesof the surface of the semiconductor substrate 124 in the opening 151.This ashing process may also cause the surface of the first antennalayer 141 (the upper surface and the inner surface of the opening 151)to be oxidized.

Next, as illustrated in FIG. 6D, a conductive material is applied intothe opening 151 to form the connecting portion 150. For example,solder-based conductive paste is applied into the opening 151, and isreflowed to form the connecting portion 150. At this moment, thesemiconductor substrate (semiconductor substrate 124 illustrated in FIG.9) and the first antenna layer 141 are electrically insulated from theconnecting portion 150 by the oxide layers formed on the semiconductorsubstrate and the first antenna layer 141 at the inner surface of theopening 151.

Next, as illustrated in FIG. 7A, a dielectric layer 143 and conductiveportions 144 are formed on the first antenna layer 141 (wafer state).For example, a sheet including the dielectric layer 143 and theconductive portions 144 passing therethrough is formed in advance, andis bonded to the first antenna layer 141.

This sheet may be formed by, for example, boring through-holes in thedielectric layer 143 composed of resin or the like by laser irradiation,and by applying solder-based conductive paste into the through-holes toform the the conductive portions 144. Bonding of this sheet to the firstantenna layer 141 and a reflow process enable the conductive portions144 to be connected to the first antenna layer 141 and the connectingportion 150. In cases where the surface of the first antenna layer 141and that of the connecting portion 150 are oxidized, the sheet may bebonded to the first antenna layer 141 after deoxidation.

Next, as illustrated in FIG. 7B, a second antenna layer 142 having awaveguide pattern including slot pairs 401 as described above is formedon the dielectric layer 143 (wafer state) including the conductiveportions 144. The second antenna layer 142 may be formed by, forexample, forming a layer composed of Cu or the like on the dielectriclayer 143 including the conductive portions 144 by electroless platingor vapor deposition, and by forming a predetermined waveguide pattern(openings of the slot pairs 401) in the layer by, for example, laserirradiation. Alternatively, the second antenna layer 142 may be formedusing a supporting tape. In this case, a layer composed of Cu or thelike is formed on the supporting tape by electroless plating or vapordeposition, a predetermined waveguide pattern is formed in the layer,and the layer is bonded onto the dielectric layer 143 including theconductive portions 144. The formation of an antenna element 140 iscompleted by the formation of the second antenna layer 142.

Herein, the dielectric layer 143 including the conductive portions 144is formed on the first antenna layer 141, and subsequently the secondantenna layer 142 having a predetermined waveguide pattern is formedthereon. Instead of this, a sheet including the dielectric layer 143 andthe second antenna layer 142 formed thereon, the dielectric layer 143including the conductive portions 144 and the second antenna layer 142having a predetermined waveguide pattern formed therein, may be producedin advance, and may be bonded onto the first antenna layer 141.

Next, as illustrated in FIG. 7C, bumps 122 are formed on the electrodepads 121 of the semiconductor element 120. Various types of bumps may beused as the bumps 122. For example, the bumps 122 may be stud bumps,ball bumps, or post electrodes. For example, the bumps 122 may be formedon the semiconductor element 120 in the wafer state, and subsequentlythe semiconductor element 120 may be diced into separate semiconductorelements 120. Alternatively, the bumps 122 may be formed on the separatesemiconductor elements 120 after dicing.

Next, as illustrated in FIG. 8A, joining portions 113 are formed onelectrode pads 111 of a module board 110 using, for example,solder-based conductive paste, and the semiconductor element 120 onwhich the bumps 122 are formed as described above is temporarily mountedon the module board 110. Subsequently, as illustrated in FIG. 8B, areflow process is performed so that the semiconductor element 120 isflip-chip mounted on the module board 110. Finally, as illustrated inFIG. 8C, an underfill resin 170 is applied to the space between thesemiconductor element 120 and the module board 110, and is cured.

The semiconductor module 100 a as illustrated in FIG. 3 is formedthrough the above-described steps. This semiconductor module 100 a ismounted on a motherboard 300.

In the semiconductor module 100 a of this example, a sheet composed ofresin in which magnetic particles are dispersed is used as the shieldinglayer 130. The module may also be formed through a similar procedure incases where a metal layer is partially (outermost surface) or entirelyused as the shielding layer 130, that is, in cases where the shieldinglayer 130 functions as a part of the antenna element. That is, a metallayer or a shielding layer 130 including a metal layer is formed on theupper surface of the semiconductor element 120 by plating or vapordeposition in the step illustrated in FIG. 6B. The opening 151 is formedby laser irradiation so as to pass through the shielding layer 130 andto reach inside the semiconductor element 120 in the step illustrated inFIG. 6C. Subsequently, an asking process using O₂ plasma gas isperformed so that the inner surface of the opening 151 (thesemiconductor substrate of the semiconductor element 120 and theshielding layer 130) is electrically insulated, and the connectingportion 150 is formed by applying a conductive material. The subsequentsteps may be performed similarly to those described above.

Next, a second embodiment will be described.

FIGS. 10 and 11 illustrate an example semiconductor module according tothe second embodiment. FIG. 10 is a schematic cross-section of thesemiconductor module according to the second embodiment. FIG. 11 is aschematic top view of the example semiconductor module according to thesecond embodiment. Herein, FIG. 10 is a schematic cross-section takenalong line L1-L1 in FIG. 11.

A semiconductor module (semiconductor device) 100 b illustrated in FIG.10 includes a module board 110, semiconductor elements 120, shieldinglayers 130, an antenna element 140, a connecting portion 150, and asealing resin 160.

As illustrated in FIG. 10, the semiconductor elements 120 are flip-chipmounted on the module board 110. In addition, electronic elements 180are mounted on the module board 110 with joining portions 113 composedof solder or the like interposed therebetween. The electronic elements180 include, for example, passive components such as capacitors,inductors, and resistors. The connecting portion 150 is disposed on themodule board 110 with one of the joining portions 113 interposedtherebetween. The semiconductor elements 120 mounted on the module board110, the shielding layers 130 formed on the semiconductor elements 120,the electronic elements 180, and the connecting portion 150 are sealedby the sealing resin 160 such that the upper end of the connectingportion 150 is exposed through the sealing resin 160. The antennaelement 140 including a first antenna layer 141, a dielectric layer 143including conductive portions 144, and a second antenna layer 142 isdisposed on the sealing resin 160. The connecting portion 150 iselectrically connected to the second antenna layer 142 by the firstantenna layer 141 located at the upper end of the connecting portion 150(separated from other portions of the first antenna layer 141) and aconductive portion 144 a (144). The antenna element does not need toinclude the conductive portions 144 (except for the conductive portion144 a).

For example, as illustrated in FIG. 11, the plurality of (herein three)semiconductor elements 120 are mounted on the module board 110. Theshielding layers 130 are formed on the upper surfaces (surfaces ofsemiconductor substrates) of the semiconductor elements 120, and mayalso be formed on side surfaces of the semiconductor elements 120.

The connecting portion 150 is formed in a substantially central portionof this semiconductor module 100 b. The position of the connectingportion 150 is set on the basis of the layout of the semiconductorelements 120 and the electronic elements 180. In addition, the size ofslots in slot pairs to be formed in the second antenna layer 142 of theantenna element 140 and the layout of the slot pairs, for example, maybe set on the basis of the frequency of electromagnetic waves to betransmitted and received, the layout of the connecting portion 150, andother conditions.

In the semiconductor module 100 b, electrical signals derived fromelectromagnetic waves received by the antenna element 140 are suppliedto the semiconductor element 120 from the connecting portion 150 throughthe module board 110. The antenna element 140 receives power from themodule board 110 through the connecting portion 150 during signaltransmission.

The semiconductor module 100 b having the above-described structure iselectrically connected to electrode pads 301 of a motherboard (circuitboard) 300 by bumps 101 composed of solder or the like, and therebymounted on the motherboard 300.

Next, an example method of forming the semiconductor module 100 baccording to the second embodiment will be described with reference toFIGS. 12A to 16B.

First, a semiconductor element 120 (wafer state) as illustrated in FIG.12A is prepared. Next, as illustrated in FIG. 12B, a shielding layer 130is formed on the upper surface (surface of a semiconductor substrate) ofthe semiconductor element 120. The shielding layer 13 may be, forexample, a sheet composed of resin in which magnetic particles aredispersed, a sheet partially or entirely formed of a magnetic layer, ora sheet partially or entirely formed of a metal layer. Subsequently, asillustrated in FIG. 12C, bumps 122 are formed on electrode pads 121disposed on the lower surface (circuit surface having wiring layers andthe like formed thereon) of the semiconductor element 120. The bumps 122may be formed on the semiconductor element 120 in the wafer state, ormay be formed on each semiconductor element 120 separated by dicing. Incases where the bumps 122 are formed on the semiconductor element 120 inthe wafer state, the semiconductor element 120 is diced into a pluralityof separate semiconductor elements 120 after the bumps 122 are formed.

Next, as illustrated in FIG. 13A, the plurality of semiconductorelements 120, connecting portions 150, and electronic elements 180 suchas passive components are mounted on a module board 110. The moduleboard 110 illustrated herein consists of two module boards 110integrated with each other in the cross-section. For example, joiningportions 113 are formed on electrode pads 111 on the module board 110,and the semiconductor elements 120 on which the bumps 122 are formed asdescribed above, the connecting portions 150, and the electronicelements 180 are temporarily mounted on the module board 110.Subsequently, a reflow process is performed so that the components aremounted on the module board 110.

The connecting portions 150 may also be formed by forming a mask layeron the module board 110 on which no components are mounted, the masklayer having openings at positions where the connecting portions 150 areto be formed, by applying a conductive material into the openings byprinting or plating, and then by removing the mask layer. Thesemiconductor elements 120 having the shielding layers 130 formedthereon and the electronic elements 180 are then mounted on the moduleboard 110 on which the connecting portions 150 are formed as above.

After the semiconductor elements 120 having the shielding layers 130formed thereon, the connecting portions 150, and the electronic elements180 are mounted on the module board 110, underfill resins 170 aredisposed between the module board 110 and the semiconductor elements 120as illustrated in FIG. 13B. Subsequently, the semiconductor elements120, the shielding layers 130 formed on the semiconductor elements 120,the connecting portions 150, and the electronic elements 180 are sealedby a sealing resin 160. The placement of the underfill resins 170 may beomitted.

Next, as illustrated in FIG. 14A, the outermost surface of the sealingresin 160 is removed such that the upper ends of the connecting portions150 covered by the sealing resin 160 are exposed through the sealingresin 160. For example, laser irradiation is performed on the sealingresin 160 to ash and remove the outermost surface of the sealing resin160. This enables the connecting portions 150 to be exposed through thesealing resin 160. Next, as illustrated in FIG. 14B, resist masks 500are formed on the sealing resin 160 around the peripheries of theconnecting portions 150. The resist masks 500 may be formed by, forexample, forming a resist film on the sealing resin 160 through whichthe connecting portions 150 are exposed and by exposing and developing(patterning) the resist film.

Next, as illustrated in FIG. 15A, a first antenna layer 141 composed of,for example, Cu is formed by electroless plating or vapor deposition.Subsequently, as illustrated in FIG. 15B, the resist masks 500 areremoved so that the first antenna layer 141 has a final pattern in whichportions formed on the connecting portions 150 are separated from otherperipheral portions.

Next, as illustrated in FIG. 16A, a dielectric layer 143 includingconductive portions 144 and a second antenna layer 142 are formed on thefirst antenna layer 141. At this moment, for example, the dielectriclayer 143 including the conductive portions 144 is formed on the firstantenna layer 141, and subsequently the second antenna layer 142 havinga predetermined waveguide pattern is formed thereon. Alternatively, asheet including the dielectric layer 143 and the second antenna layer142 formed thereon, the dielectric layer 143 including the conductiveportions 144 and the second antenna layer 142 having a predeterminedwaveguide pattern formed therein, may be produced in advance, and may bebonded onto the first antenna layer 141. This completes the formation ofan antenna element 140. Finally, as illustrated in FIG. 16B, separatesemiconductor modules 100 b are obtained by dicing.

The semiconductor module 100 b as illustrated in FIG. 10 is formedthrough the above-described steps. This semiconductor module 100 b ismounted on a motherboard 300.

The semiconductor module 100 b having the above-described structure isprovided with both a shielding function and an antenna function in asmall space on the motherboard 300. For comparison, a semiconductormodule of another form will be described with reference to FIG. 17.

In a semiconductor device (electronic apparatus) 1000 illustrated inFIG. 17, a semiconductor module 1100 having a shielding function and anantenna part 1200 are electrically connected to electrode pads 301 of amotherboard 300 by bumps 101 composed of solder or the like, and therebymounted on the motherboard 300.

The semiconductor module 1100 includes a module board 1110, asemiconductor element 1120 mounted on the module board 1110, electronicelements 1180 such as passive components, and a metal case 1190 forblocking electromagnetic waves. The metal case 1190 covers thesemiconductor element 1120 and the electronic elements 1180. The antennapart 1200 is mounted on the motherboard 300 separately from thesemiconductor module 1100. The semiconductor element 1120 in thesemiconductor module 1100 and the antenna part 1200 are electricallyinterconnected through the motherboard 300.

In the electronic apparatus 1000 illustrated in FIG. 17, thesemiconductor element 1120 and the electronic elements 1180 are shieldedfrom electromagnetic waves by the metal case 1190 whereas the antennapart 1200 is mounted on the motherboard 300 outside the metal case 1190to receive electromagnetic waves from the outside. Since thesemiconductor module 1100 and the antenna part 1200 are mounted on themotherboard 300 in different areas in the electronic apparatus 1000, themotherboard 300 needs a relatively large space to implement both theshielding function and the antenna function.

In contrast, the semiconductor module 100 b according to the secondembodiment is provided with both the shielding function and the antennafunction, and is capable of implementing both functions in a relativelysmall space on the motherboard 300.

In addition, this semiconductor module 100 b does not need complicatedprocessing of components or complicated electrical connection betweenthe components.

The structure and the method of forming the structure according to thesecond embodiment enable the small semiconductor module 100 b havingdesired properties and reliability to be formed in a relatively simplemanner.

Next, a third embodiment will be described.

FIGS. 18 and 19 illustrate an example semiconductor module according tothe third embodiment. FIG. 18 is a schematic cross-section of thesemiconductor module according to the third embodiment. FIG. 19 is aschematic top view of the example semiconductor module according to thethird embodiment. Herein, FIG. 18 is a schematic cross-section takenalong line L2-L2 in FIG. 19.

In a semiconductor module (semiconductor device) 100 c illustrated inFIGS. 18 and 19, a module board 110 and a first antenna layer 141 of anantenna element 140 are electrically interconnected by a secondconnecting portion 150 c and one of joining portions 113. Thesemiconductor module 100 c according to the third embodiment differsfrom the semiconductor module 100 b (FIGS. 10 and 11) according to thesecond embodiment in this respect. The antenna element does not need toinclude conductive portions 144 (except for a conductive portion 144 a)also in this semiconductor module 100 c according to the thirdembodiment.

This semiconductor module 100 c enables electrical signals derived fromelectromagnetic waves in different frequency bands to be supplied tosemiconductor elements 120 through the connecting portion 150 c and aconnecting portion 150. For example, electrical signals ofelectromagnetic waves in the MHz range may be transmitted and receivedby the semiconductor elements 120 using the connecting portion 150, andthose of electromagnetic waves in the GHz range may be transmitted andreceived by the semiconductor elements 120 using the connecting portion150 c.

The positions of the connecting portions 150 and 150 c may be set on thebasis of the layout of the semiconductor elements 120 and electronicelements 180. The size of slots in slot pairs to be formed in a secondantenna layer 142 of the antenna element 140 and the layout of the slotpairs, for example, may be set on the basis of the frequencies ofelectromagnetic waves to be transmitted and received, the layout of theconnecting portions 150 and 150 c, and other conditions.

The semiconductor module 100 c may be formed through a similar procedurefor forming the semiconductor module 100 b described with reference toFIGS. 12A to 16B. That is, in order to form the semiconductor module 100c having the second connecting portion 150 c, the second connectingportion 150 c is mounted or formed on the module board 110 as is thefirst connecting portion 150 in the step illustrated in FIG. 13A. Thesubsequent steps may be performed similarly to those described above.

The structure and the method of forming the structure according to thethird embodiment also enable the small semiconductor module 100 c havingdesired properties and reliability to be formed in a relatively simplemanner similarly to the second embodiment.

Next, a fourth embodiment will be described.

FIGS. 20, 21A, and 21B illustrate an example semiconductor moduleaccording to the fourth embodiment. FIG. 20 is a schematic cross-sectionof the example semiconductor module according to the fourth embodiment.FIGS. 21A and 21B are schematic top views of the example semiconductormodule according to the fourth embodiment. Herein, FIG. 20 is aschematic cross-section taken along line L3-L3 in FIG. 21B.

A semiconductor module (semiconductor device) 100 d illustrated in FIG.20 includes a module board 110, semiconductor elements 120, shieldinglayers 130, an antenna element 140, a connecting portion 150, and asealing resin 160.

The antenna element 140 of this semiconductor module 100 d has astructure described below. That is, the antenna element 140 includes afirst antenna layer 141 formed on the sealing resin 160, a dielectriclayer 143 formed on a side surface of the sealing resin 160 and on apart of the first antenna layer 141, second antenna layers 142, eachhaving a predetermined waveguide-pattern shape, formed on the dielectriclayer 143.

The first antenna layer 141 of the antenna element 140 is electricallyconnected to the module board 110 by the connecting portion 150. Thedielectric layer 143 may be, for example, a resin layer. Variouswaveguide patterns may be adopted as the shapes of the second antennalayers 142. The waveguide patterns include, for example, linear antennapatterns as illustrated in FIGS. 21A and 21B.

For example, each of the second antenna layers 142 may have a monopoleantenna pattern as illustrated in FIG. 21A. An end of each monopoleantenna pattern is electrically connected to the module board 110 by oneof joining portions 113 d composed of solder or the like, and iselectrically connected to the corresponding semiconductor element 120through the module board 110. Alternatively, each of the second antennalayers 142 may have an inverted F-shaped antenna pattern as illustratedin FIG. 21B. Two points of each inverted F-shaped antenna pattern areelectrically connected to the module board 110 by the joining portions113 d.

Electrical signals derived from electromagnetic waves received by thisantenna element 140 are supplied from the connecting portion 150 and thejoining portions 113 d to the semiconductor elements 120 through themodule board 110. The antenna element 140 receives power through thejoining portions 113 d and the connecting portion 150 during signaltransmission. The gain of power increases when the power is fed in acentral portion of the area where the dielectric layer 143 and thesecond antenna layers 142 are disposed.

In the antenna element 140 according to the fourth embodiment, thesecond antenna layers 142 are disposed over the first antenna layer 141with the dielectric layer 143 interposed therebetween. The antennaelement 140 becomes capable of transmitting and receiving electricalsignals by appropriately designing the dielectric constant and thethickness of the dielectric layer 143 and the layout and the length ofthe patterns of the second antenna layers 142.

In the antenna element 140 of the semiconductor module 100 d having theabove-described structure, the first antenna layer 141 connected to theconnecting portion 150 is formed on the sealing resin 160, and thedielectric layer 143 and the second antenna layers 142 are formedthereon. For example, a film composed of polyimide or the like is usedas the dielectric layer 143, and the second antenna layers 142 havingantenna patterns are formed on the film in advance. Subsequently, thedielectric layer 143 having the second antenna layers 142 formed thereonis bonded to the first antenna layer 141 formed on the sealing resin 160and to a side surface of the sealing resin 160. Predetermined terminalsof the second antenna layers 142 are electrically connected to themodule board 110 using the joining portions 113 d composed of solder orthe like. In this manner, the semiconductor module 100 d as illustratedin FIGS. 20, 21A, and 21B is obtained.

The structure and the method of forming the structure according to thefourth embodiment also enable the small semiconductor module 100 dhaving desired properties and reliability to be formed in a relativelysimple manner.

In accordance with the technology described above, small semiconductordevices having desired properties and reliability are manufactured in asimpler manner.

All examples and conditional language provided herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

1. A semiconductor device comprising: a circuit board; a semiconductorelement mounted on the circuit board; a shielding layer disposed on anupper surface of the semiconductor element; an antenna element disposedover the shielding layer; and a connecting portion passing through theshielding layer and electrically connecting the semiconductor elementand the antenna element.
 2. The semiconductor device according to claim1, wherein the connecting portion includes a through-silicon via.
 3. Thesemiconductor device according to claim 1, wherein the connectingportion has a columnar shape, and passes through the shielding layer tobe electrically connected to the semiconductor element, and the antennaelement is electrically connected to the connecting portion.
 4. Thesemiconductor device according to claim 1, further comprising: a sealingresin that seals the semiconductor element, wherein the antenna elementis disposed on the sealing resin, the connecting portion has a columnarshape, and passes through the sealing resin to be electrically connectedto the circuit board, and the the antenna element is electricallyconnected to the connecting portion.
 5. The semiconductor deviceaccording to claim 1, wherein the antenna element includes a firstantenna layer disposed over the shielding layer, a second antenna layerdisposed over the first antenna layer, and a dielectric layer disposedbetween the first and second antenna layers.
 6. The semiconductor deviceaccording to claim 1, wherein the antenna element includes an antennalayer disposed over the shielding layer, and a dielectric layer disposedbetween the shielding layer and the antenna layer.
 7. The semiconductordevice according to claim 5, wherein the antenna element includes aconductive portion that passes through the dielectric layer.
 8. Thesemiconductor device according to claim 1, wherein the shielding layerincludes a resin layer that contains magnetic particles.
 9. Thesemiconductor device according to claim 1, wherein the shielding layerincludes a magnetic layer composed of a magnetic material.
 10. Thesemiconductor device according to claim 1, wherein the shielding layerincludes a metal layer composed of a metal material.
 11. A method ofmanufacturing a semiconductor device, the method comprising: forming ashielding layer on an upper surface of a semiconductor element; forminga columnar connecting portion so as to pass through the shielding layerand so as to be electrically connected to the semiconductor element;forming an antenna element over the shielding layer so as to beelectrically connected to the connecting portion; and mounting thesemiconductor element on a circuit board after the forming of theantenna element.
 12. The method according to claim 11, wherein thecolumnar connecting portion includes a through-silicon via that passesthrough the semiconductor element.
 13. A method of manufacturing asemiconductor device, the method comprising: forming a shielding layeron an upper surface of a semiconductor element; mounting thesemiconductor element on a circuit board after the forming of theshielding layer; electrically connecting a columnar connecting portionto the circuit board; sealing the semiconductor element and theconnecting portion with a sealing resin; and forming an antenna elementover the sealing resin so as to be electrically connected to theconnecting portion.